Gigabyte AORUS Gen4 5000E SSD 500GB PCIe 4.0 x4 NVMe 1.4 M.2 2280 5000MB/s Read 3800MB/s Write – GP-AG450E500G-G

Original price was: ₱4,100.00.Current price is: ₱3,595.00.

500GB capacity with PCIe 4.0 x4, NVMe 1.4 interface
Sequential read speed up to 5000 MB/s and write speed up to 3800 MB/s
High-speed 3D TLC NAND Flash with 1600+ MT/s throughput
Host Memory Buffer for enhanced performance
TRIM, S.M.A.R.T., and Over-Provision support for reliability
30% lower power consumption than standard PCIe 4.0 SSDs
1.5M hours MTBF with 5-year or 300TBW limited warranty
SKU: GP-AG450E500G-G

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SKU: GP-AG450E500G-G Categories: Internal M.2 Drive, Storage Tag: Gigabyte

AORUS Gen4 5000E SSD 500GB – Elite Performance Storage

Transform your computing experience with the AORUS Gen4 5000E SSD 500GB, crafted for high-performance needs with a PCIe 4.0 x4 interface and NVMe 1.4 specification. This M.2 2280 solid-state drive achieves remarkable sequential read speeds of up to 5000 MB/s and write speeds of up to 3800 MB/s, delivering up to 30% faster performance than PCIe 3.0 SSDs, ideal for gaming, content creation, and intensive multitasking. Featuring high-speed 3D TLC NAND Flash with 1600+ MT/s throughput, it ensures superior efficiency and responsiveness. The Host Memory Buffer technology leverages system DRAM for optimized performance without onboard DRAM, enhancing power efficiency by approximately 30% compared to standard PCIe 4.0 SSDs. Support for TRIM, S.M.A.R.T., and Over-Provision technologies ensures data reliability and sustained performance. The GIGABYTE SSD Tool Box provides comprehensive drive monitoring, while the GIGABYTE Control Center offers an intuitive interface for managing hardware. With a 1.5 million-hour MTBF and a 5-year or 300TBW limited warranty, this SSD delivers exceptional speed and durability in a compact form factor.

Specification	AORUS Gen4 5000E SSD 500GB	AORUS Gen4 5000E SSD 1TB
SKU	GP-AG450E500G-G	AG450E1TB-G
Interface	PCI-Express 4.0x4, NVMe 1.4
Form Factor	M.2 2280
Total Capacity	500GB	1000GB
NAND	3D TLC NAND Flash
Sequential Read Speed	Up to 5,000 MB/s	Up to 5,000 MB/s
Sequential Write Speed	Up to 3,800 MB/s	Up to 4,600 MB/s
Dimension	80 x 22 x 2.3 mm
Mean Time Between Failure (MTBF)	1.5 million hours
Power Consumption (Active)	Average: Read: 4W; Write: 4W
Power Consumption (Idle, ASPT on)	20mW
Temperature (Operating)	0°C to 70°C
Temperature (Storage)	-40°C to 85°C
Warranty	Limited 5-years or 300TBW, whichever comes first
Note	TBW (Terabytes Written): Total amount of data that can be written before likely failure. Actual performance may vary based on system configuration.