HIKSEMI WAVE(P) 512GB PCIe 3.0 NVMe M.2 2280 Internal SSD - HS-SSD-WAVE(P) 512G
HIKSEMI WAVE(P) 512GB PCIe 3.0 NVMe M.2 2280 Internal SSD – HS-SSD-WAVE(P) 512G

Original price was: ₱5,960.00.Current price is: ₱5,190.00.

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HIKSEMI WAVE(P) 512GB PCIe 3.0 NVMe M.2 2280 Internal SSD – HS-SSD-WAVE(P) 512G

Original price was: ₱5,960.00.Current price is: ₱5,190.00.

  • SKU: HS-SSD-WAVE(P) 512G
  • Fast PCIe 3.0 NVMe: Experience superior transfer speeds compared to traditional SATA SSDs, with read speeds up to 2230 MB/s.
  • 512GB Storage Capacity: Perfect balance for operating systems, daily applications, and media libraries.
  • 3D NAND Technology: Advanced flash memory provides higher density, stability, and improved endurance.
  • Compact Form Factor: M.2 2280 design fits perfectly into ultrabooks and modern gaming motherboards.
  • Energy Efficient: Optimized for low power usage, ideal for extending battery life in portable devices.
  • Reliability First: High endurance and high MTBF ratings ensure long-term stability for your data.

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Elevated Performance for Modern Computing

The HIKSEMI WAVE(P) 512GB PCIe 3.0 NVMe M.2 2280 SSD is engineered to provide a substantial boost to system responsiveness and data transfer speeds. By leveraging the advanced NVMe protocol over the PCIe 3.0 interface, this solid-state drive delivers rapid read speeds of up to 2230 MB/s and write speeds reaching 2000 MB/s. This high-performance capacity ensures that your operating system boots in seconds, demanding applications launch instantly, and large files are moved with incredible efficiency. Whether you are constructing a new desktop build or upgrading a notebook, the WAVE(P) series offers the critical performance overhead necessary to maintain a smooth and fluid computing environment.

Sophisticated 3D NAND Technology

At the core of the HIKSEMI WAVE(P) lies state-of-the-art 3D NAND Flash technology, which allows for higher storage density while maintaining exceptional data integrity. This storage medium is not only optimized for high-speed access but is also designed to be highly reliable, making it an excellent choice for daily power users. The architecture of the 3D NAND allows for better energy management and improved endurance, ensuring that your most important multimedia files, software projects, and personal data remain secure over long-term operation. With a focus on stability and high-IOPS capability, this drive excels in managing the complex data streams found in modern multi-tasking scenarios.

Compact Design and Energy Efficiency

Space-constrained systems benefit immensely from the standard M.2 2280 form factor of the WAVE(P). This compact design allows for effortless installation in a wide range of devices without requiring extra cables or mounting hardware. Furthermore, the drive is engineered with a focus on power efficiency, boasting a maximum power consumption of only 2.2 watts. This low energy footprint is not only beneficial for maintaining lower thermal profiles inside small-form-factor builds but also provides a tangible advantage for laptop users seeking to extend their battery life, enabling you to work, create, and game for longer durations while on the move.

Professional Durability and Reliability

Reliability is woven into the very fabric of the HIKSEMI WAVE(P) series. Featuring an impressive mean time between failures (MTBF) of 1.5 million hours, the drive is built to withstand the rigors of daily use. From its robust, shock-resistant solid-state construction that eliminates the vulnerabilities of mechanical drives, to the sophisticated management software that monitors and protects your data, HIKSEMI has prioritized consistency. Whether you are tackling professional video rendering, intensive web browsing, or high-definition gaming, this SSD provides the performance and the peace of mind required for a seamless and highly productive digital life.

HIKSEMI WAVE(P) 512GB NVMe SSD Specifications
General Information
BrandHIKSEMI
Model SeriesWAVE(P)
SKUHS-SSD-WAVE(P) 512G
Capacity512 GB
Performance & Interface
InterfacePCIe 3.0 NVMe
Max Sequential ReadUp to 2230 MB/s
Max Sequential WriteUp to 2000 MB/s
4K Random Read (IOPS)Up to 460K
4K Random Write (IOPS)Up to 335K
Physical & Technical Specifications
Form FactorM.2 2280
Storage Medium3D NAND Flash
TBW (Total Bytes Written)120 TB
MTBF1,500,000 hours
Operating Temperature0°C to 70°C
Max Power Consumption2.2 W
Warranty3 Years
Packaging Weight0.2 kg
Packaging Dimensions (L×W×H)15 × 11 × 5 cm
Brand

Hiksemi

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Product Information Notice

Specifications, images, packaging, and included accessories shown on this page are based on information published by the manufacturer and are provided for reference only. Manufacturers may revise product specifications, features, SKUs, and designs at any time and without prior notice, and actual specifications may vary between board revisions, production batches, or regional versions of the same model.

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